High Reliability GaN FET Gate Drivers for Next-generation Power Electronics Technology

The characteristics of GaN devices meet the design requirements of high-frequency and high-power density in next-generation power electronics technology well. However, the superior performance of GaN devices depends heavily on the high-reliability gate drivers. This paper reviews the key issues in the GaN gate driver, such as the design of high-speed level shifter, the design of floating power rail, EMI optimization, dead time optimization and other issues. Moreover, the feasible solutions and latest research progress on various issues are presented.