Impact of Gate Dielectrics on Analog/RF Performance of Double Gate Tunnel Field Effect Transistor

In this paper, analog/radio frequency (RF) analysis of double-gate tunnel FET (DG TFETs) with a combination of three different gate dielectric such as SiO
₂
, stacked oxide (SiO
₂
+HfO
₂
) and, HfO
₂
is performed by using Silvaco-Atlas technology computer added (TCAD) simulation tool. Figure of merits (FOM`s) like transconductance (g
_m
), output conductance (g
_ds
), gate capacitance (C
_gg
), unity gain cut-off frequency (f
_i
), gain bandwidth product (GBW) and transconductance generation factor (gm/Id) are analyzed in the present study and compare with them. Higher I
_ON
/IoFF (10
¹¹
) of high-k only dielectric DGTFET (D3), can reduce dynamic as well as static power dissipation in digital circuits. Similarly higher RF FOM's i.e. f
_t
and GBW in gigahertz range projects the utility of D3 device for RF Circuits.