Flexible, Dopant Free a-Si:H Solar Cell

Dopant free thin film solar cells with the common structure of ZnO:Al / MoO
_x
/ a- Si:H / LiF / Al are fabricated directly on flexible, transparent substrates. All the layers, except the a-Si:H layer, are deposited by simple, low temperature physical vapour deposition methods. An open circuit voltage of 0.764V and a short circuit current density of 11.31 mA/cm
²
are measured under AM1.5 irradiance. The proof of concept for flexible, dopant free a- Si:H solar cell demonstrated here is a step forward towards processing cost-effective, flexible and lightweight thin film solar cells.