The Influence of Al2O3 Passivation of III-V on Ge Multijunction Solar Cells to the Spatial Distribution of Luminescent Coupling Effect

The nonuniformity of luminescent coupling (LC) effect in III-V based multijunction solar cells (MJSCs) is partly ascribed to recombination at perimeter defects. An attempt to solve this was done by sidewall passivation of InGaP/GaAs/Ge triple junction solar cells through atomic layer deposition of thin Al
2
O
3
. Results revealed that sidewall passivation of a complete MJSC can increase LC current collection in a limiting GaAs middle cell by 21.9% and enhance its uniformity by 7.2%; hence, demonstrating a non-invasive way to improve current matching among subcells.