Post-Deposition Recrystallization of Co-Evaporated CuInxGa(1-x)Se2 Films by Bromide Vapor Treatments

CIGS films deposited at 400°C onto molybdenum-coated soda-lime glass substrates by co-evaporation were annealed in InBr
₃
vapors or CuBr with Se vapors. The treatments were conducted at 400°C, 450°C, or 500°C for one hour. The InBr
₃
treatments above 400°C and CuBr with Se treatments at 500°C resulted in increased grain size, improved crystallinity, and a decrease in Cu
₂
Se phase. Annealed samples also exhibited large surface facets. CIGS films deposited at 350°C were also investigated in InBr
₃
and CuBr with Se vapors at 450°C for one hour. These treatments resulted in increased grain size and less deviations from the as-deposited composition.