Sinusoidal Oscillator using 32-nm CNTFET-OTA

In this work, a design and simulation study of voltage controlled sinusoidal oscillator is presented using Carbon nanotubes field effect transistor (CNTFET) based operational transconductance amplifier (CNTFET-OTA) using minimum number of active and passive components. A comparative analysis of low power CNTFET-OTA and traditional complementary metal oxide semiconductor (CMOS) based operational transconductance amplifier (CMOS-OTA) at 32-nm technology node carried out by altering various carbon nanotubes (CNTs) parameters shows that CNTFET-OTA offers 280%, 262% and 256% improvement in the DC gain, output resistance and transconductance respectively. A lesser total harmonic distortion (THD) with 136 times lesser power consumption is achieved when compared to CMOS-OTA. Further, a quadrature model based sinusoidal oscillator design is verified with the simulated results. The simulation results have confirmed excellent temperature stability for wide oscillation frequency range.