Steady-State Thermal Simulation of the InP HBT Device Heat Spreading in DAHI Chip

In this paper we analyzed the problem of thermal management in heterogeneous integration (InP HBT on CMOS). In this work because InP HBT chiplet is vertically stacked on the silicon chip, the heat from HBT devices can only be dissipated downward through the Si substrate. We performed 3-D finite element analysis to investigate the potential of thermal heterogeneous interconnect (THIC) as vertical heat spreader. The Diverse Accessible Heterogeneous Integration (DAHI) chip with the area of 2.7 $\times$ 2.3m m
²
is also analyzed by ANSYS. The simulation results show that THIC can effectively accelerate heat dissipation in DAHI chip, which will also improve the electric performance or reliability.