Quantum Transport Simulation and Performance Analysis of Sub-10 nm Graphene Nanoribbon Field Effect Transistor

In this work, we perform a quantum mechanical simulation of (7,0) graphene nanoribbon field effect transistor (GNRFET) in MATLAB To study and better understand the performance and feasibility of graphene nanoribbon (GNR) as a channel material for transistor applications in the sub-10 nm range. The simulation was implemented based on semi empirical tight binding method and coupled solution of Schrodinger equation within NEGF formalism and Poisson equation that can efficiently incorporate quantum tunneling and short channel effects. Performance analysis shows commendable performance of the device with on-current of over 650 ${\mathrm {\mu A/\mu m}}$ and an estimated subthreshold swing of 73.9 mV/decade suggesting its potential for the next generation low power switching applications.