Reliability Assessment of AlGaN/GaN Schottky Barrier Diodes Under ON-State Stress

This article aims to study the degradation of Schottky Barrier Diodes (SBDs) with a Gated Edge Termination (GET) under ON-state stress conditions. After all the stress experiments a recoverable behavior is observed, which indicates charge trapping in pre-existing defects and no creation of new traps. A broad statistical analysis demonstrates better reliability and a longer lifetime compared to previous works in a 200-V technology. Some systematic differences in parameter degradation are observed depending on wafer location, likely caused by process-related variations. By using matched pairs (MPs) technique, we have demonstrated that probability distributions characterized by single Weibull slopes can be obtained over the wafer that could allow better characterization of the intrinsic reliability of these devices.