A 60 GHz Low-Noise Amplifier for Detection Systems

In this paper, we present a 60 GHz low-noise amplifier (LNA) to improve the performance of detection systems. The LNA is designed in GaAs metamorphic high electron mobility transistor (m-HEMT) technology and occupies a surface of 1.29 × 1.56 mm
²
. Inductive degeneration technique is used for suitable trade-off between gain and noise. The three-stage LNA achieves 14.5 dB of gain and 2.06 dB of noise factor at 60.2 GHz, while consuming 13.5 mW. The simulated non-linear characteristics show an IP
_1dB
of -10 dBm and an IIP
₃
of -4.4 dBm.