A Unidirectional Transducer Design for Scaling GHz AlN-Based RF Microsystems

In this work, we present a novel unidirectional transducer design for frequency scaling aluminum nitride (AlN)-based radio frequency (RF) microsystems. The proposed thickness-field-excited single-phase unidirectional transducers (TFE-SPUDT) adopt 5/16 wavelength electrodes and, thus, enable efficient piezoelectric transduction with better frequency scalability. The design space of the TFE-SPUDT is theoretically explored and validated using the acoustic delay line (ADL) testbeds. The ADL testbeds with a large feature size of 3 μm show a center frequency of 1 GHz, a minimum insertion loss (IL) of 4.9 dB, and a fractional bandwidth (FBW) of 5.3%, significantly surpassing the IL and frequency scalability of the previously reported AlN transducers. The design approach can potentially contribute to various AlN-based RF microsystems for signal processing, physical sensing, optomechanical interaction, and quantum acoustic applications, and are readily extendable to other piezoelectric platforms.