Investigation of plasmon hybridization between slot-ring resonator absorber and lattice pattern substrate

This paper presents the mechanism of SRR absorber permittivity control by plasmon hybridization at 120 GHz band. We have already shown that the permittivity of SRR absorber increases by 33 dB by opposing the lattice pattern substrate close to SRR absorber via 50-μm-thick spacer. We have found that the 3-dB passband bandwidth of SRR substrate increased to 113-126 GHz when the distance between two substrates was reduced by using 20-μm-thick spacer, which improves the broadband data transmission characteristics. We have simulated the electric field vector between SRR absorber and lattice pattern substrate in order to clarify the mechanism of plasmon hybridization between the SRR absorber and the lattice pattern substrate, and found that modes of plasmon hybridization between SRR absorber and lattice pattern substrate are different from that between SRR absorbers.