Materials Characterization With Multiple Offset Reflects at Frequencies to 110 GHz

Understanding the electrical properties of materials is a necessary part of any microwave circuit design. In this article, we explore the possibility of employing multiple-offset-reflect devices for on-wafer materials characterization at frequencies up to 110 GHz. The objective of this new technique is to provide a one-port characterization technique that does not require a first-tier calibration. To verify our results, we performed companion analyses with multiline thru-reflect-line, extracting the permittivity of fused silica and SU-8, which is a common photocurable polymer. For fused silica, we obtained a relative permittivity of 3.80 ± 0.02 from 5 to 110 GHz. For SU-8, we obtained a relative permittivity of 3.25 ± 0.02 at 28 GHz, which agreed with the literature values.