Effect of Deposition Time on Gd doped ZnO using Simultaneous RF and DC Sputtering

The effect of deposition time on physical properties of gadolinium (Gd) doped zinc oxide (ZnO) thin films were successfully investigated. The films were deposited using simultaneous direct current (DC) and radio frequency (RF) sputtering on a glass substrate. The deposition time varied at 15, 30, 45 and 60 minutes. The films were measured using XRD, FESEM, and UV-Vis spectrophotometer. XRD shows hexagonal wurtzite structure with a preferred c-axis orientation (002) phase for all the films. The films crystallinity is improved with increasing the deposition time up to 60 minutes. The film thickness shows an increment with increasing in deposition time which is 246, 315, 448 and 491 nm for 15, 30, 45 and 60 minutes, respectively. UV-Vis spectrophotometer for all the films shows good transmittance in the visible region with an average of 82% - 95%. The band gap of Gd doped ZnO thin films were 3.20, 3.23, 3.17 and 3.13 eV as deposition time increase from 15, 30, 45 and 60 minutes, respectively.