Inverse Class-F RF Power Amplifier Design Using 10W GaN HEMT

This paper presents the design and simulation of an inverse Class F (F-1) radio frequency power amplifier (RFPA) using a 10W Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) CGH40010 manufactured by Cree. The simulated device is operated at 1.5 GHz frequency. This paper also discusses the details on the analysis and device-model based simulation design procedure such as the load pull, the source pull, the parasitic de-embedding network, input and output matching design, and the waveform analysis using Keysight Advanced Design System (ADS) software. The simulation results exhibit the maximum drain efficiency (DE) of 73.7% and gain of 18.3 dB at the output power of 40 dBm.