High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes

Semi-polar micro-LEDs have gain increasing interests due to the advantages of polarization control and quantum efficiency improvement. In this work, a novel semi-polar (20-21)-plane micro-LEDs array has been designed and manufactured. In comparison with c-plane micro-LEDs, semi-polar micro-LEDs indicate better electrical and optical performance. The relative EQE of semi-polar micro-LEDs remains at 62% under the injected current density of 775.6 A/cm
²
, which indicates a reduced efficiency droop due to less polarization in MQWs. It has been further proved by a significant reduction of 55% in emission peak blue-shift under the injected current density from 11.1 A/cm
²
to 775.6 A/cm
²
. In addition, the carrier recombination dynamics and spatial light distribution of semi-polar micro-LEDs with different pixel sizes have been studied. Fast recombination lifetime in smaller size semi-polar micro-LEDs indicates a promising way to be used as a high modulation bandwidth light source. Stable and uniform light distribution in a wider range of spatial azimuths further supports for the semi-polar micro-LEDs as a strong candidate for the applications of high-resolution display and high-speed visible light communication.