Reliability Research of TSV Micro Structure under Thermal and Vibration Coupled Load

Due to the advantages unmatched by traditional two-dimensional packaging technology, three-dimensional packaging technology has gradually attracted more and more attention from researchers and engineers, and is on the way to the market, but its degradation failure mechanism and reliability problems have not been systematically studied and solved. As one of the key structures of three-dimensional packaging, the degradation failure mechanism of through silicon via (TSV) under environmental and working load has not been fully elucidated. Previous studies only focused on the failure of TSV structures under thermal load, while ignoring the vibration load. Therefore, the reliability of the typical TSV structure under the thermal-vibration coupled load was studied in this paper. Based on numerical analysis, the time-history transient analysis of the typical TSV structure with the redistribution layer under thermal-vibration coupled load was performed. The analysis considered the combined effects of thermal load and vibration load and their mutual coupling effects. The maximum equivalent stress, elastic and plastic strain response of the structure were obtained, and the analysis of them was carried out. The effects of random vibration load and different thermal conditions on structural reliability were compared and analyzed, which could provide an important reference for the subsequent research of the degradation mechanism of TSV structure under thermal-vibration coupled load.