Photoelectric Properties of Indium Molybdenum Oxide Thin Films Using Electron Beam Evaporation

In addition to the display industry, due to the development of the solar cell industry in the past decade, the demand for optical conductive films in the energy industry is also increasing. The new generation of optical conductive films developed for the characteristics of solar cells has become a hot research topic. Indium oxide (In
₂
O
₃
) doped molybdenum oxide (MoO
₃
), also called as Indium molybdenum oxides (IMO), is popular because of its high electron mobility without the extremely high free electron concentration. It can maintain low resistivity without reduce the transmittance in near-infrared light spectrum. IMO is more suitable for the energy efficient windows used for photovoltaic device applications.In this study, indium oxide and molybdenum oxide were combined and mixed, then pressed as target ingots. The substrate of electron beam evaporation is performed at room temperature for thin film's coating. The IMO film was deposited on a gl ass substrate for investigation. The influence of amount of molybdenum oxide added in the target ingot will be discussed. The influence of the target 's sintering temperature on the photoelectric properties of the IMO film will be modified according to the results of the film. More detailed analyses will be presented in the future.