High speed and precise ablation etching of wide band gap GaN semiconductor using high-intensity femtosecond laser

We report on the demonstration of precise and high-speed ablation etching of GaN films using high-intensity femtosecond laser at 800 nm. This ablation etching process is based on the two-photon absorption process of the GaN. It is found that there is no Ga layer formation on the ablated surface of the GaN.