DC Analysis of Black Phosphorous based IMPATT Diode

Black phosphorous based Double Drift Region(DDR) Impact Ionization Avalanche Transit Time device (IMPATT) is proposed for use in various microwave applications. Black phosphorous is now a major competitor for many semiconductor materials. IMPATT is a specially designed diode that exhibits property of negative resistance. In this paper, a detailed simulation study (using MATLAB software) in terms of parameters like (i) Doping Profile and (ii) Electric Field is carried for the use of black phosphorous in DDR IMPATT.