A 2.35/2.4/2.45/2.55 GHz Low-Noise Amplifier Design Using Body Self-Biasing Technique for ISM and LTE Band Application

This paper presents a quadruple-band low noise amplifier (LNA) which utilizes a differential pair common-source (CS) cascode amplifier to drive a LC-tank loading. The capacitors array are parallel with the LC-tank to implement the central frequency selection. The band-selection switch employs the binary voltage controlling to alter the equivalent capacitance of capacitors array of the loading LC-tank, which results in the central frequency of the LNA is switched. The body self-biasing technique is designed to minimize the noise contribution caused by the body effect of the MOS devices. In addition, the analysis of the transistors dimension ratio versus output referred 1-dB compression point (OP$_{1-dB}$ ) is presented to describe the design of the linearity optimization in CS cascode LNA. The |S21| is 16.8, 16.63, 16.78, 16.39 dB at 2.35, 2.4, 2.45, 2.55 GHz, respectively. The noise figure (NF) is under 2.75 dB between the quadruple-band mode. This proposed LNA is simulated by 55 nm RF CMOS process and consumes 3.75 mW excluding output buffer from 1.25 V supply.