The Impact of Interface Traps (acceptor/donor) on Fe DS-SBTFET Characteristics

This paper presents the reliability issues of Ferroelectric Dopant Segregated Schottky Barrier TFET (Fe DS-SBTFET). The device has been optimized for various thickness of ferroelectric layer in order to achieve steep subthreshold slope. The impact of uniform and gaussian traps has been examined in Ferroelectric DS-SBTFET. Various electrical parameters such as Subthreshold Swing (SS) and I
_ON
/I
_OFF
ratio have been quantified against donor or acceptor types of interface traps, density (Dit) of traps, and trap energy level (E
_trap
). Acceptor type trap deteriorates the ON current whereas donor type trap enhances the ON current. I
_ON
/I
_OFF
ratio of 5.35 × 10
⁸
and SS of 17 mV/decade have been achieved by the proposed device in the absence of traps.