Edge-Coupling of O-Band InP Etched-Facet Lasers to Polymer Waveguides on SOI by Micro-Transfer-Printing

O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 μm deep recess created in the 3 μm thick oxide layer of a 220 nm SOI wafer. A 7 × 1.5 μm
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cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with <; 0.7 μm lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.