Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure

The paper presents the results of simulation of the impacts of a heavy charged particle with a value of linear energy transfer equal to 1.81 MeV·cm
²
/mg, 10.1 MeV·cm
²
/mg, 18.8 MeV·cm
²
/mg, 55.0 MeV·cm
²
/mg, corresponding to nitrogen ions
¹⁵
N
⁺⁴
with energy E = 1.87 MeV, argon
⁴⁰
Ar
⁺¹²
with energy E = 372 MeV, ferrum
⁵⁶
Fe
⁺¹⁵
with energy E = 523 MeV, xenon
¹³¹
Xe
⁺³⁵
with energy E = 1217 MeV, on electrical characteristics of n-MOSFET device structure when there are variations in the motion trajectory and ambient temperature.