Improvement on Well Design and Operation of Potential Well Barrier Diodes

The flexibility in design of the potential well in PWB diodes has shown promising prospects for zero-bias operation capability and improvements in the overall performance of the diode. We consider the right intrinsic region whilst regrading further the Ga4s well The performance of the diodes was measured and compared in terms of the turn-on voltage and curvature coefficient. We found that the turn on voltage of the diodes improves significantly with increases in the graded regions. At a current density of 0.5× 10
^-12
Amperes per meters square, the diodes with graded regions 0.01, 0.03 and 0.05 mircons have turn-on voltages of 0.85, 0.5 and 0. 38 Volts, while the curvature coefficient estimated at 0. 5V was respectively obtained to be 6. 4, 10. 3 and 20. 1 per volt.