Experiment on VCSEL Composed of Special Structure DBRs in Integrated Optoelectronic Chip

In this paper, we have demonstrated the feasibility of the proposed integrated chip by the experiments on its laser part of Vertical-cavity Surface-emitting Laser (VCSEL). The success of the integrated chip depends on the special designed cavity-in DBR, and the VCSEL’s resonant cavity is composed by the cavity-in DBRs. With a gold reflector on top of the original integrated chip wafer to improve the Q value of the VCSEL’s resonant cavity, the VCSEL is successful to lase. Its threshold current is 3 mA, the slope efficiency is 0.84 W/A and the estimated maximum light power is 30 mW. The experiment illustrates that the cavity-in DBR is reasonable and practical and makes foundation for the realization of the integrated chip in single-fiber bi-directional optical interconnects.