Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H
₃
PO
₄
solution and Al
₂
O
₃
sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 10
¹⁹
cm
^-3
in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.