Anisotropic Reconstructed Silicon (110)- “16 × 2” Surface

Control of low dimensional nanostructures on semiconductor surfaces is one of the most attractive studies. Among the semiconductor surfaces, a reconstructed Si(110)-“16×2” is a promising template for nanostructure, because of its one dimensional up-and-down terrace of 2.5 nm width. We succeeded in preparation of ordered Si, Ge(110)-“16×2” single-domain surfaces. One-dimensional structures with C60 molecules and Si, Ge nanodot formed on the surfaces. Furthermore, we determined the initial oxidation and the oxide layer decomposition process on reconstructed Si(110)-“16×2” surface.