Characterization and Modeling of SiC MOSFETs Turn On in a Half Bridge Converter

The main aim of this paper is to provide an analytical model of the turn on transient behaviour of Silicon Carbide (SiC) MOSFETs used in a half bridge converter topology. The model includes the high frequency parasitic elements of PCB board, bus-bar, device packaging, in order to provide a very accurate prediction of the power devices performance over a wide operating range. A critical issue in the modeling is given by the transconductance profile, which has been determined by using different methods. The proposed modeling approach can be considered a valuable tool to predict electrical stresses in both power devices due to overvoltages and over-currents and is a good trade-off between computational burden and accuracy in the results. The model has been validated by experimental tests confirming the theoretical study.