Comparison of Trapped Electron from SSI and Tunneling Mechanism in SGMONOS Memory Cell Programming Process

In this study, we conduct a simulation regarding the programming process of split gate SONOS memory device. Specifically, we try to examine the dominant mechanism involved in the process. We found that for this device, the hot carrier injection mechanism contribute in more additional electron to the trap layer compared to the tunneling mechanism. This is allowed by the split gate geometry which give rise to an additional electric field that increasing the probability of hot carrier injection. Meanwhile, by evaluating the electron velocity in the channel region below the trap layer, it is shown that the electron motion is not vertical to the oxide layer but rather, makes an angle. This may explain why tunneling mechanism gives practically negligible effect to the additional electron added to the trap layer.