High-Speed Electro-Absorption Modulated Laser at 1.3 μm Wavelength Based on Selective Area Growth Technique

We demonstrate In
_x
Al
_y
Ga
_1-x-y
As based electro-absorption modulated DFB laser at 1.3 μm wavelength based on selective area growth technique. The fabricated device exhibits 5 mW output power, wide E-O bandwidth (>40 GHz), 2V driving-voltage for 10 dB extinction ratio, and clear eye-opening at 32Gbit/sec.