High-Speed InGaAs/InAlAs SACM Avalanche Photodiodes with Robust Optical & Electrical Overload

We study the optical and electrical overload of high-speed InGaAs/InAlAs avalanche photodiodes for future PON OLT and ONU applications. We achieve robust optical overload at +4dBm with successful suppression of surface charge accumulation and multiplication-layer junction breakdown. Physical model of surface state charge accumulation under optical stress is also presented.