Implementation and Analysis of 7T SRAM at Different Design Technologies

In SRAM, Write capability and Read constancy are effective tool to regulate the performance and proficiency of the cell. Read speed, leakage current and read stability are key factor, which are used to decide any practical SRAM recital. We find improved performance of 7T cell by changing the width of pull down transistor NM1 and NM2. The change in cell ratio changes pull down transistor width and it come under the design scaling. In this paper, we have analyzed the read variation of the SRAM cell and obtained the leakage current waveform and power waveform by using CADENCE tool in ideal 7T cell at room temperature and compare the cells read operation while uphold the write and read access period at lowest voltage supply.