A Summary of MIL STD 750, Method 1017 Neutron Irradiation Tests Performed on JANSR2N3700, JANSR2N2369; JANSR2N2222; and JANSR2N2907 Bipolar Junction Transistors (July 2019)

This work will show the results of neutron interactions on 4 JANSR (100kRad) bipolar junction transistors (BJTs). The tests were carried out as per MIL STD 750, Method 1017. The total integral neutron fluence was stepped at 5 levels between 5. $0\mathrm{x}10^{11}\mathrm{n}/\mathrm{c}\mathrm{m}^{2}$ and $1.0\mathrm{x}10^{14} \mathrm{n}/\mathrm{c}\mathrm{m}^{2}$. The effects of this neutron bombardment are consistent with those of displacement damage. The primary effects were $\mathrm{h}_{F\mathrm{E}}$ degredation combined with increasing ICES and ICBO over increasing fluence. Secondary effects include a rise in VCESAT and a slight rise in BVCEO. While not specifically tested, it is believed that dynamic parameters are impacted by $\mathrm{h}_{F\mathrm{E}}$ reduction including the storage time in the BE junction in switching applications and BVcBo/BVcEO approaching unity. The end goal of this work is to offer an explanation of neutron irradiation that is useful in a switching power circuit design