The Simulation Study of Process Variation on Threshold Voltage in 180nm Floating-Gate device

The floating-gate device has become an established component of all electronic systems, especially Non-volatile memories in recent years. In this paper, the impact of process variation on the threshold voltage of a 180nm floating-gate device is presented. By using Athena, Atlas and Devedit3D tools for 2D and 3D structure simulations, the study illustrates the sensitivity of the threshold voltage to different geometrical parameters including gate length, gate width, tunnel oxide thickness, nitride spacer thickness, and bottom ONO oxide thickness.