Numerical and experimental comparison of vertical DMOSFET and UMOSFET

A numerical analysis has been performed to evaluate the relative performance of DMOS and UMOS power FETs based on a two-dimensional analytical approach. Since termination technology can achieve a near-ideal breakdown voltage for a given substrate resistivity and thickness, the breakdown voltage is determined by the intrinsic geometry of the unit cell in the vertical power MOSFETs (DMOSFET and UMOSFET). The authors analyse the on-resistance value each structure can offer while satisfying a specific blocking voltage requirement is given.<
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