High Performance FinFET Inverter using Self Controlled Voltage Level Technique

Restrictions of Moore’s law spread for upcoming decades by using high performance system. This is the reason for the evolution of new technology in transistors era. The technology started to design and produce micro scale thin film transistors. In the nanometer era, bulk MOSFETS faces a great challenge in scaling due to short channel effects. As scaling increases, a leakage current increases, so the efficiency decreases. FinFETs substituted bulk MOSFETs due to its resistance to short channel effects. FinFETs has better short channel effects performance compared to bulk FETs. This article provides the concepts of different modes of technology, performance, comparative analysis, delay and power consumption of circuit using hspice tool at 32nm. 50-55% of power leakage is less in SCVL compared to bulk MOSFETs.