Some annealing effects in proton irradiated silicon detectors

Annealing studies of a proton irradiated Si test diode (1 MeV-neutron equivalent fluence is /spl phi//sub eq/=1.82/spl times/10/sup 13/ cm/sup -2/) were performed. The macroscopic characterization shows that during the annealing experiment the type inversion effect happened. The changes in the microscopic features using the annealing treatment were investigated using Thermally Stimulated Current method.