Abstract:
We review memory-chip and memory-cell developments of various VLSI memories over the last three decades, trends in DRAM technology (such as power-supply schemes and gate ...Show MoreMetadata
Abstract:
We review memory-chip and memory-cell developments of various VLSI memories over the last three decades, trends in DRAM technology (such as power-supply schemes and gate oxide thickness compared with those of MPUs, memory-cell structures and multi-divided arrays for modern DRAMs), state-of-the art embedded DRAM technology for high-speed, low-cost and low-voltage designs, and prospects for emerging RAMs such as FeRAMs and MRAMs.
Published in: 2000 International Semiconductor Conference. 23rd Edition. CAS 2000 Proceedings (Cat. No.00TH8486)
Date of Conference: 10-14 October 2000
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-5885-6
