Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs

This work describes successful fabrication of high performance short-channel 600V 4H-SiC planar-gate MOSFETs using a non-self-aligned process in a 6 inch manufacturing foundry for the first time. The effect of channel length on the electrical characteristics of 600V 4H-SiC inversion-mode planar-gate power MOSFETs is reported using experimental data and numerical simulations. Devices were successfully fabricated with channel lengths ranging from 0.3 to 1.1 μm. The devices with 0.3μm channel length were found to have the lowest specific on-resistance and the best High Frequency Figures-of-Merit (HF-FOMs). Statistical distributions for device parameters are reported demonstrating that high yield and uniformity can be achieved for the 0.3μm channel length devices.