Improved Compact Nonlinear Modeling of DC I-V Characterstics of MESFETs

In this paper we present an improved Compact Nonlinear model for MESFETs. Curtice Cubic Model is selected as the basis to model the transfer characteristics of device due to its suitability to the device characteristic under investigation. Gate source voltage (V
gs
) dependence of output transfer characteristics is accommodated in proposed model without increasing the number of coefficients of polynomial. Drain source voltage (V
ds
) dependence of input transfer characteristics is further investigated and accommodated to improve the model fitting to device characteristics with only one additional coefficient. Improvement in proposed model is compared in terms of the sum of squares due to error (SSE) and Root Mean Square Error (RMSE). The proposed Model has SSE and RMSE values of 0.0004253 and 0.0005 respectively as compared to Curtice Cubic Model having corresponding values of 0.002638 and 0.001245.