Low Switch Loss and High Current Density Superjunction IGBT Based upon Deep Trench Technology

In this paper we present a Superjunction IGBT (Super-IGBT) based upon Deep Trench (DT) Superjunciton technology to cope with high current density, smaller chip size and low switch losses. The current density of Super-IGBT is 550A/cm2(CP test:20A@1.8V), almost close to Si-IGBT limit. Moreover, under the same switch condition, Super-IGBT show 54% lower turn-on loss, 15% lower turn-off loss and 60% chip size shrink compared with the 650V FS-IGBT. Super-IGBT is favorable for high power and high frequency applications.