High Performance MoS2 N-Channel MOSFETs

In this paper, we have demonstrated high performance back-gated MoS
₂
MOSFETs with scandium (Sc) contact and high-k ZrO
₂
dielectrics for improved contact resistance and electron mobility. Record drain current of 200 μA/μm has been achieved for 1-μm channel length multilayer MoS
₂
MOSFETs on ZrO
₂
/Si substrates. The intrinsic contact resistance of low work function metal Sc on exfoliated MoS
₂
with strong gating effect on source region is significantly decreased to 0.9 kΩ·μm. By taking the impact of contact resistance into consideration, the intrinsic mobility extracted from Y function technique is 132 cm
²
/Vs, 3 times higher than SiO
₂
substrate, originating from the significant screening effect of high-k ZrO
₂
dielectrics on the impurity scattering.