The ohmic contacts on the layers for gas sensors

This paper is concerned with the deposition of semiconductor layers by laser ablation, the preparation of ohmic contacts, and the application of these layers for gas sensors. A new test contact pattern for contact resistance measurement is proposed. The contact structure has a great influence on measurement accuracy. The specific contact resistance of all samples is improved by annealing, the optimal values of the annealing temperature are in the range of 550-750/spl deg/C. The Pt/Sb metallisation does not improve contact properties.