Simulation of Energy Schemes and Electron Spectrum in Plane Nitride Semiconductor Nanostructures

Using the dielectric continuum model and the electron effective mass model in layers of a multilayer nitride semiconductor nanosystem, analytical solutions are obtained for the system formed by the Poisson equation and the stationary Schrödinger equations. The expressions for the electron energy scheme components and the dispersion equation are established, which allows to establish the electron spectrum in the nanosystem. Using the geometric and physical parameters of the nanosystem, which can function as an active element of a separate cascade of a quantum cascade detector, calculations of the nanostructure effective potential, electron spectrum, and intensity of quantum electronic transitions are performed on the basis of the developed mathematical model. The results obtained are important for the further study of electronic processes in nanodevices created on the basis of nitride semiconductors.