Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation

The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO
2
) or SiO
2
, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO
2
over SiO
2
in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO
2
and in that with RfO
2
. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO
2
, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO
2
was used.