A New Voltage Reference Based on Threshold Voltages Summation of CMOS Transistors

The necessity of voltage references with low temperature dependence is notable in analog and mixed signal circuit design. These circuits are normally designed using the base-to- emitter voltage (V
_BE
) of bipolar junction transistors (BJT). Although this is the most widespread technique, different solutions can be found in literature. In this paper a new topology of voltage reference with low temperature dependence is shown. The design is based on the summation of two voltages; one with positive temperature dependence and another with negative temperature dependence, both obtained using the threshold voltage (V
_th
) of MOS transistors. The circuit was designed using TSMC 0.13um and achieved 16ppm/
⁰
C in a range of 0
⁰
C to 100
⁰
C.