Photoluminescence in [311]A GaAs/AlAs short-period superlattices with arrays of quantum well wires

The prime task of this work was a study of photoluminescence (PL) properties (including photoluminescence polarization anisotropy) of [311]A GaAs/AlAs short-period superlattices (SLs) with arrays of quantum well wires (QWW-SLs). The studies were aimed to elucidate the possibilities of applications of the QWW-SLs for creation of lasers. The GaAs/AlAs SLs grown on surfaces [100], [311]B and the QWW-SLs grown on facet surface [311]A were studied by PL spectroscopy method in the wide temperature range from 77 to 300 K. The very effective room temperature PL for direct and indirect transitions, the polarization anisotropy effect in PL spectra and the difference in the PL of SLs grown on [311]B and facet [311]A were originally observed. The observed effects can be explained by recombination of quasi-one-dimensional high stability excitons in quantum well wires. It was determined that on the basis of [311]A GaAs/AlAs short-period QWW-SLs it is possible to create semiconductor lasers working on direct and indirect transitions singly or together. These results are important for the manufacturing of various optoelectronics devices.