Performance Comparison of (GaAS/GaAs) and (InGaP/GaAs) Tunnel Junction in Multi-Junction Solar Cells

This study presents a comparison of the performance of two multi-junction solar cells in terms of simulated short-circuit current density, open circuit voltage, efficiency and fill factor one of these cells with an InGaP / GaAs structure with a GaAs / GaAs junction tunnel and the other with the same structure but with an InGaP / GaAs hetrojunction tunnel. The silvaco-ticad software has been used to analyze and study these performances for both solar cells, the total thickness is specified to 0.66μm of top solar cell (GaInP), and the thickness of bottom solar cell (GaAs) is 2.64 μm and the tunnel junction with thickness 0.040 μm. He result of the simulation exposures for these multiple junction solar cells gives a conversion efficiency maximum of 24.2343% (AM1.5) would be obtained by choosing the p-In0.5Ga0.5P/n-GaAs tunnel heterojunction.