Effect of Oxygen Concentration Ratio on a Ga2O3-Based Resistive Random Access Memory

In this study, we have successfully prepared gallium oxide resistive random access memory by RF magnetron sputtering. The various Ar/O
₂
gas flow was carefully controlled by different oxygen concentration to obtain proper Ga
₂
O
₃
film. It was demonstrated that the performance of the devices was improved by optimizing oxygen vacancy through deposition condition. Consequently, the sample with 25% of oxygen concentration exhibited the outstanding electrical properties with maximum cycles of 220, an I
_on
/I
_off
ratio of 5 × 10
⁴
, retention time of 10
⁴
s, high resistance state /low resistance state ratio of 7 × 10
⁵
under 0.1V read voltage.